New 700V and 1200V SiC Schottky Barrier Diodes (SBD) for Reliable and Rugged Automotive Applications
Microchip Technology has introduced the700V and 1200V SiC Schottky Barrier Diode (SBD) powered devicesfor helping designers to deliverautomotive quality standardsacross a wide range of voltage, current, and package options. The AEC-Q101-qualified device allows the designers to increase the EVsystem’s efficiency and maintain high quality. It also maximizessystem reliability and ruggednessfor delivering stable and lasting application life.
The SiC offerssuperior avalanche performanceenabling designers to reduce the need for external protection circuits which eventually reduces the system cost and complexity. Unlike other available SiCs, the new device showedno degradation in performanceunder extreme conditions and an increase in application life.
The new SiC delivers20% higher energy withstandin Unclamped Inductive Switching (UIS) and also thelowest leakage currentsat elevated temperatures. Microchip’s SiC automotive power devices complement its broad portfolio of controllers, analog, and connectivity solutions providing designers with total system solutions for electric vehicles and charging stations.
Microchip’s AEC-Q101 qualified 700V and 1200V SiC SBD devices (also available as die for power modules) for automotive applications are available for volume production orders.
Features of 700 and 1200V SiC Schottky Barrier Diode (SBD)
- Improved system efficiency with lower switching losses
- Higher power density for similar power topologies
- Higher operating temperature
- Reduced cooling needs, smaller filters, and passives
- Higher switching frequency
- Ten times lower Failure In Time (FIT) rate for neutron susceptibility than comparable Insulated Gate Bipolar Transistors (IGBTs) at rated voltages
- Extremely low parasitic (stray) inductance at< 2.9 nH in SiC modules
Note: More technical information and数据表can be found on700V SiC Schottky Barrier Diodeand1200V SiC Schottky Barrier Diodeproduct page.
